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| UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER SYMBOL RATING 100 80 5 1 2 0.5 2 150 -55 ~ +150 UNIT V V V A A W W C C Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current(DC) Ic Collector Current(PULSE)*1 Icp Collector Power Dissipation*2 Pc Collector Power Dissipation*2 Pc Junction Temperature Tj Storage Temperature TSTG *1 Duty=/1/2,Pw=200ms *2 When mounted on a 40*40*0.7 mm ceramic board. ELECTRICAL CHARACTERISTICS (Ta=25C,unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob P 82-180 TEST CONDITIONS Ic= 50A Ic= 1mA IE=50A VCB=80V, IE=0A VEB=4V , IC=0A VCE=3V,Ic= 0.5A Ic=500mA,IB= 20mA VCE= 10V, IE= -50 mA, f=100MHz VCB= 10V, IE= 0 A, f=1MHz Q 120-270 MIN 100 80 5 TYP MAX UNIT V V V A A V MHz pF 82 0.15 100 20 1 1 390 0.4 CLASSIFICATION OF hFE RANK RANGE R 180-390 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-030,A UTC 2SD1898 1000 NPN EPITAXIAL SILICON TRANSISTOR Figure 2.Grounded Emitter Output Characteristics Ta=25 1.0 Collector Current: Ic(A) 0.8 0.6 2mA 0.4 1mA 0.2 IB =0mA 2 4 6 8 10 Collector to Emitter Voltage:V CE (V) Figure 4.Collector-emitter Saturation Voltage vs.Collector Current Ta=25 6mA 5mA 4mA 3mA ELECTRICAL CHARACTERISTICS CURVES Figure 1.Grounded Emitter Propagation Characteristics VCE = 5V Ta=25 Collector Current: Ic(mA) 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Base to Emitter Voltage:V BE (V) Figure 3.DC Current Gain vs.Collector Current Ta=25 0 0 CE(sat) ( V) 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Collector Saturation Voltage:V DC Current Gain:hFE 1000 VCE = 3V 100 VCE = 1V Ic/IB=20/1 Ic/IB=10/1 0 10 100 1000 Collector Current : Ic(mA) Figure 6.CollectorOutput Capacitance vs.Collector-Base Voltage Ta=25 f=1MHz I E=0A I c=0A 0 0 10 100 Collector Current : Ic(mA) Figure 5. Gain Bandwidth Product vs.Emitter Current 1000 1000 Collector Output Capacitance :Cob (pF) Emitter Output Capacitance :Cob (pF) Ta=25 500 Transition Frequency :fT(MHz) 200 100 50 20 10 5 2 1 2 5 10 20 50 100200 5001000 Emitter Current: -I E (mA) V CE = 5V 100 10 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Emitter To Base Voltage :V CB (V) Collector To Base Voltage :V CB (V) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-030,A UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR 10 5 2 Collector Current:Ic (A) 1 500m 200m 50m 20m 10m T a= 25 5m 2m S ingle non-repetitive puls e 1m 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 C ollec tor to E m itter V oltage:V C E (V ) F igure 7.S afe O perating A rea Ic m ax (puls e) PW DC =1 P W 0m =1 00 s m 100m s UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-030,A |
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